Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
The MMG3007NT1 is a general purpose amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as cellular,
P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l
small--signal RF.
Features
? Frequency: 0 to 6000 MHz
? P1dB: 16 dBm @ 900 MHz
? Small--Signal Gain: 19 dB @ 900 MHz
? Third Order Output Intercept Point: 30 dBm @ 900 MHz
? Single 5 Volt Supply
Document Number: MMG3007NT1
Rev. 6, 2/2012
MMG3007NT1
0--6000 MHz, 19 dB
16 dBm
InGaP HBT
? Internally Matched to 50 Ohms
? Cost--effective SOT--89 Surface Mount Package
12
3
? In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
CASE 1514--02, STYLE 1
SOT--89
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Symbol
G p
IRL
900
MHz
19
--14
2140
MHz
16.5
--21
3500
MHz
14
--21
Unit
dB
dB
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Symbol
V CC
I CC
P in
T stg
Value
7
250
10
--65 to +150
Unit
V
mA
dBm
° C
Output Return Loss
ORL
--20
--17
--25
dB
Junction Temperature
(2)
T J
150
° C
(S22)
2. For reliable operation, the junction temperature should not
Power Output @1dB
P1dB
16
15.5
16
dBm
exceed 150 ° C.
Compression
Third Order Output
OIP3
30
29
28.5
dBm
Intercept Point
1. V CC = 5 Vdc, T A = 25 ° C, 50 ohm system.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 86 ° C, 5 Vdc, 47 mA, no RF applied
Symbol
R θ JC
Value (3)
77
Unit
° C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf .
Select Documentation/Application Notes -- AN1955.
? Freescale Semiconductor, Inc., 2005--2008, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMG3007NT1
1
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相关代理商/技术参数
MMG3007NT1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor (InGaP HBT)
MMG3007NT1_12 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor
MMG3008NT1 功能描述:射频放大器 12DBM 20DBGAIN GPA SOT89 RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
MMG3008NT1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor (InGaP HBT)
MMG3008NT1_12 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor
MMG3009NT1 功能描述:射频放大器 18DBM 15DBGAIN GPA SOT89 RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
MMG3009NT1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor (InGaP HBT)
MMG3010NT1 功能描述:射频放大器 15DBM 15DB GAIN GPA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel